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• Process technology
As Doping Bury Deep collector sinker Isolation Base Implant
P+ Emitter P Extension AL/Si(1%)
SiN/PSG SIN/PSG
• Design ruler
Size: 4.0 X 6.0¦Ìm2
Masking layers from 9 to13
• Specification of Parts
Parts |
Parameter |
Specification |
Transistor |
Working voltage |
10 ¡« 60V |
NPN Hfe |
60 ¡« 250 |
NPN f T |
700MHz |
PNP Hfe |
10 ¡« 50 |
PNP f T |
10MHz |
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